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Doping Issues in Wide Band-Gap SemiconductorsExeter, United Kingdom21-23 March 2001 |
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AnnouncementThere is a great deal of interest in overcoming problems relating to shallow dopants in these materials. For example, boron is a shallow acceptor in diamond but there are problems relating to shallow donors. Phosphorus and sulphur are key candidates at the moment and there is intense interest in optimising their activity.
In GaN, oxygen and silicon are known to be shallow donors but there are difficulties in finding efficient shallow p-type dopants - Mg and Be are favoured but have low activities. In SiC, nitrogen and boron on the Si site are the best donors available. Nevertheless all these dopants suffer problems relating to solubility and the formation of complexes.
Experimentalists are very well aware that ab initio modelling is a very effective way in which dopant activity can be predicted. It is significant that the oxygen donor in GaN was first suggested from ab initio theoretical results.
There is current interest in co-doping where the electrical activity can be increased when two or more impurities (sometimes both donors and acceptors) are involved and this will be one of the topics at the workshop. Other topics will involve growth and characterisation.
This workshop will last for 3 days and will feature a small number of extended invited talks, contributed talks, and poster sessions. Ample time for informal discussions will be provided.
This workshop follows previous events organised in Exeter: Hydrogen'99, which focused on hydrogen in silicon, and Oxygen'96, a NATO advanced research workshop centred on early stages of oxygen precipitation in silicon.
Confirmed invited speakers include:| Prof. Friedhelm Bechstedt, Friedrich-Schiller-Universität Jena, Germany | Native defects and self-doping in SiC |
| Dr. Bernard Clerjaud, Université P. et M. Curie, Paris, France | Beryllium and magnesium impurities in GaN and their interactions with oxygen and hydrogen |
| Prof. Peter Deák, TU Budapest, Hungary | Boron and aluminium doping in SiC and its passivation by hydrogen |
| Prof. Hiroshi Katayama-Yoshida, Osaka University, Japan | Codoping method for the fabrication of low-resistivity wide bandgap semiconductors |
| Dr. Stanislaw Krukowski, High Pressure Research Center, Warsaw, Poland | High nitrogen pressure growth of GaN single crystals: doping and physical properties |
| Dr. Christoph E. Nebel, Walter Schottky Institut, Garching, Germany | n-type doping of CVD-diamond by sulfur |
| Dr. Joerg Neugebauer, Fritz-Haber-Institut, Berlin, Germany | Acceptor doping and compensation in group-III nitrides |
| Prof. Risto Nieminen, Helsinki University of Technology, Finland | |
| Prof. Bo Monemar, Linköping University, Sweden | Shallow dopants in HVPE GaN |
| Dr. Juergen Ristein, University of Erlangen, Germany | Surface doping: a special feature of diamond |
| Dr. John Robertson, University of Cambridge, UK | |
| Prof. Kimmo Saarinen, Helsinki University of Technology, Finland | Vacancies in the growth and doping of GaN |
| Prof. Bengt Svensson, Royal Institute of Technology, Stockholm, Sweden | Doping of silicon carbide by ion implantation |
| Dr. Chris van de Walle, Xerox PARC, Palo Alto, USA |
Local Organisers
| Prof. R. Jones
& Dr. C. J. Fall School of Physics University of Exeter Stocker Road Exeter EX4 4QL United Kingdom |
Telephone: +44 1392 264134 Secretary: +44 1392 264151 Fax: +44 1392 264111 Email: widegap2001@excc.ex.ac.uk |
Caspar Fall email: C.J.Fall@exeter.ac.uk University of Exeter phone: +44 (1392) 264198 Exeter EX4 4QL, UK fax : +44 (1392) 264111