 Group photograph
Report for
Compound Semiconductor Magazine
Programme &
Participants
Some 3D defect examples:
GaN, SiC, diamond
Practical details,
Exhibits
Conference venue,
Email access from local systems
Call for papers and registration, Announcement
Download the poster
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Workshop Objective:
The aim of the workshop was to bring together
experimentalists - interested in optimising and
characterising the electrical activity of
dopants in wide band-gap materials -
and theoreticians who carry out calculations in this area.
The workshop focused mainly on defects and impurities
in GaN, SiC, ZnO, and diamond.
New:
- Read the report published in
Compound Semiconductor Magazine (PDF)
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