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Doping Issues in Wide Band-Gap Semiconductors

Exeter, United Kingdom
21-23 March 2001
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Gallium Nitride

Below is a GaN wurtzite crystal with a complex defect formed by a gallium interstitial atom and a substitutional oxygen atom. The atomic structure was relaxed using the ab initio AIMPRO code.

This is a rotatable 3D structure created with LiveGraphics3D.
Drag mouse on the figure to rotate it. Shift-drag to zoom. Ctrl-drag to adjust the perspective.

Gallium Nitride

Below is a GaN wurtzite crystal with a magnesium impurity on a gallium lattice site. The wurtzite c-axis is parallel to the Z direction.

This is a rotatable 3D structure created with LiveGraphics3D.
Drag mouse on the figure to rotate it. Shift-drag to zoom. Ctrl-drag to adjust the perspective.

Caspar Fall              email: C.J.Fall@exeter.ac.uk
University of Exeter     phone: +44 (1392) 264198
Exeter EX4 4QL, UK       fax  : +44 (1392) 264111