Talk abstract

The influence of doping in semiconductor materials leads to a band gap shift (BGS) causing a remarkable effect on the efficiency of optic-electronic devices. We have investigated the BGS of the Si-doped wurtzite GaN for impurity concentrations spanning the insulating to the metallic regimes. The calculations were carried out within a framework of the random phase approximation and the electron-electron, electron-optical phonon, and electron-ion interactions have been taken into account. In the wake of a very recent photoluminescence measurements, we have showed and discussed the possible transitions involved in the present scenario.