| NAME | ADDRESS |
ABSTRACT | TYPE |
| Fanny Albrecht |
Friedrich-Schiller-Universität, Institut für Festkörperphysik, AG Festkörperphysik, Max-Wien-Platz 1, D-07743 Jena, Germany
(email) |
Radiotracer investigation of a deep Be-related band gap state in 4H-SiC |
Poster |
| Helder Alves |
I. Physics Institut, University of Giessen, Germany
(email) |
Compensation Mechanism in MBE and MOVPE grown GaN:Mg |
Poster |
| Donat J As |
University of Paderborn, FB-6 Physics, Warburger Str. 100, D-33095 Paderborn, Germany
(email) |
Carbon - an alternative acceptor for cubic GaN |
Talk |
| Alam Assadulah |
AIXTRON AG, Kackertstr. 15-17, 52072 Aachen, Germany
(email, web) |
Aixtron AG |
Booth |
| Danie Auret |
Physics Department, University of Pretoria, Pretoria 0002, South Africa
(email) |
Electrical Characterisation of Defects in As-Grown and
Proton Irradiated n-Type ZnO |
Invited talk |
| Johannes Baur |
OSRAM Opto Semiconductors GmbH&Co OHG
(email) |
|
|
| Friedhelm Bechstedt |
Friedrich-Schiller-Universität, Institut für Festkörpertheorie und Theoretische Optik, Max-Wien-Platz 1, 07743 Jena, Germany
(email, web) |
Native defects and self-doping in SiC |
Invited talk |
| Baiba Berzina |
Institute of Solid State Physics, University of Latvia, 8 Kengaraga Str., LV-1063 Riga, Latvia
(email, web) |
Natural dopants and their spectral characteristics in AlN crystalline lattice |
Talk |
| Alexander T Blumenau |
Theoretische Physik, Universität Paderborn, D-33098 Paderborn, Germany, and, School of Physics, University of Exeter, Exeter EX4 4QL, UK
(email, web) |
60-degree dislocations in GaN and their dissociation |
Poster |
| Paul D Bristowe |
University of Cambridge, Dept of Materials Science and Metallurgy, Pembroke St, Cambridge CB2 3QZ, UK
(email, web) |
Computational study of the effect of Al and In on the formation energies and acceptor levels of Mg and C dopants in GaN |
Poster |
| Christopher WM Castleton |
Department of Physics, Uppsala University, Box 530, 751 21 Uppsala, Sweden
(email) |
|
|
| Bernard Clerjaud |
Laboratoire d'Optique des Solides, Université Pierre et Marie Curie, Case Courrier 80, 4, Place Jussieu, F-75252 Paris cedex 05, France
(email) |
Beryllium and Magnesium Dopants in GaN and their Interactions with Oxygen and Hydrogen |
Invited talk |
| José Coutinho |
School of Physics, University of Exeter, Exeter EX4 4QL, UK
(email, web) |
|
|
| Stephen Cummins |
Emcore Corp., Les Campagnes 1C, Le Mas Neuf, 34130 Mauguio, France
(email, web) |
Emcore Corporation |
Booth |
| J. John Davies |
Department of Physics, University of Bath, Claverton Down, Bath BA2 7AY, UK
(email, web) |
Displaced substitutional acceptors in semiconductors of zincblende structure |
Poster |
| Edward A Davis |
Department of Physics and Astronomy, University of Leicester, Leicester, LE1 7RH, UK
(email) |
Shallow versus deep hydrogen states in ZnO and HgO |
Talk |
| Peter Deák |
Budapest University of Technology and Economics, Department of Atomic Physics, Budafoki út 8, Budapest, H-1111, Hungary
(email, web) |
Boron and Aluminum Doping in SiC and its Passivation by Hydrogen |
Invited talk |
| Thomas Eberlein |
School of Physics, University of Exeter, Exeter EX4 4QL, UK
(email, web) |
|
|
| Jan Evans-Freeman |
Centre for Electronic Materials and Department EE&E, UMIST, PO Box 88, Sackville Street, Manchester M60 1QD, UK
(email) |
|
|
| Chris P Ewels |
CPES, University of Sussex, Falmer, Brighton, BN1 9QJ, UK
(email, web) |
|
|
| Caspar J Fall |
School of Physics, University of Exeter, Exeter EX4 4QL, UK
(email, web) |
|
|
| Antonio Ferreira da Silva |
Instituto de Fisica, Universidade Federal da Bahia 40210-340 Salvador, Bahia, Brazil
(email, web) |
Influence of Si doping on optical properties of wurtzite GaN |
Talk |
| Jonathan P Goss |
School of Physics, Stocker Road, Exeter University, Exeter, EX4 4QL, UK
(email, web) |
p-type surface doping of diamond: a first principles study |
Talk |
| Joachim Grillenberger |
IFK / University of Jena, Max-Wien-Platz 1, 07743 Jena, Germany
(email) |
|
|
| Ulrike Grossner |
Institut für Festkörperphysik, Friedrich-Schiller-Universität, Max-Wien-Platz 1, 07743 Jena
(email, web) |
|
|
| Pascal Gubbini |
Emcore Corp., Les Campagnes 1C, Le Mas Neuf, 34130 Mauguio, France
(email, web) |
Emcore Corporation |
Booth |
| Nigel Harrison |
EMF Limited, Unit 5 Chesterton Mills, French's Road, Cambridge CB4 3NP, UK
(email, web) |
EMF Ltd |
Booth |
| Malcolm Heggie |
CPES, University of Sussex, Falmer, Brighton., BN1 9QJ, UK
(email) |
|
|
| Ben Hourahine |
School of Physics, University of Exeter, Exeter EX4 4QL, UK
(email, web) |
|
|
| Bob Jones |
School of Physics, University of Exeter, Exeter EX4 4QL, UK
(email, web) |
|
|
| Hiroshi Katayama-Yoshida |
Department of Condensed Matter Physics, The Institute of Scientific and Industrial Research (ISIR), Osaka University, Osaka 567-0047, Japan
(email, web) |
Codoping method for the fabrication of low-resistivity
wide bandgap semiconductors:
prediction vs. experiment |
Invited talk |
| Markus O Kaukonen |
School of Physics, University of Exeter, Stocker Road, Exeter, EX4 4QL, UK
(email) |
Hydrogen interstitials in silicon carbide polytypes |
Poster |
| Philip J C King |
ISIS Facility, Chilton, Oxfordshire, OX11 0QX, United Kingdom
(email, web) |
|
|
| Stanislaw A Krukowski |
High Pressure Research Center, Polish Academy of Sciences, 01-142 Warsaw, Sokolowska 29/37, Poland
(email, web) |
High nitrogen pressure growth of GaN single crystals:
doping and physical properties |
Invited talk |
| | |
Peculiarities of Dopants Activation in Pressure-Grown GaN:Mg Crystals | Poster |
| Sergei O Kucheyev |
Department of Electronic Materials Engineering, Research School of Physical Sciences and Engineering, The Australian National University, Canberra, ACT 0200, Australia
(email) |
Problems of doping GaN by ion implantation |
Talk |
| David Lancefield |
Department of Physics, School of Physics and Chemistry, University of Surrey, Guildford, Surrey, GU2 7XH, UK
(email, web) |
Temperature Dependent Hole Transport in GaN |
Talk |
| Chris D Latham |
Laboratory of Physics, Helsinki University of Technology, P.O. Box 1100, FIN-02015 HUT, Finland
(email, web) |
Defects in beryllium doped GaN modelled by local density functional theory |
Poster |
| Yves Marfaing |
LPSC, CNRS Bellevue, 1, Place Briand, F-92195 Meudon Cedex, France
(email, web) |
Contribution of statistical fluctuations to the co-doping effect |
Poster |
| Bastian Marheineke |
Thomas Swan Scientific Equipment Ltd, Buckingway Business Park, Cambridge CB4 5UG, UK
(email, web) |
Thomas Swan |
Booth |
| Trevor Martin |
DERA Malvern, Room PA224, St Andrews Road, Malvern, Worcs WR14 3PS, UK
(email) |
Conduction in Undoped GaN Grown by MOVPE |
Talk |
| Alan Mills |
III-Vs Review magazine, Elsevier Advanced Technology, The Boulevard, Langford Lane, Kidlington, Oxford OX5 1GB, UK
(email, web) |
|
|
| Bo A Monemar |
Department of Physics, Linköping University, S-581 83 Linköping, Sweden
(email, web) |
Shallow dopants in GaN |
Invited talk |
| John Mullins |
Thomas Swan Scientific Equipment Ltd, Buckingway Business Park, Cambridge CB4 5UG, UK
(email, web) |
Thomas Swan |
Booth |
| Christoph E Nebel |
Walter Schottky Institut, TU-Munich, Am Coulombwall, D-85748 Garching, Germany
(email, web) |
n-type doping of CVD diamond by sulfur |
Invited talk |
| Joerg Neugebauer |
Fritz-Haber-Institut, Faradayweg 4-6, D-14195 Berlin, Germany
(email, web) |
Dopants on GaN surfaces: Incorporation mechanisms and effect on surface morphology |
Invited talk |
| Risto M Nieminen |
Laboratory of Physics, Helsinki University of Technology, P.O. Box 1100, 02015 HUT, Finland
(email, web) |
Computational studies of defects and doping in GaN and SiC |
Invited talk |
| Wilfred Okolie |
Ukrainian Engineerno-Pedagogical Academia, Prospect Pobedi, Dom 60A KB-50, Kharkov-61202, Ukraine
(email) |
Material Physics |
Poster |
| Toshihiko Ooie |
Marine Resource and Environment Institute, National Institute of Advanced Industrial Science and, Technology, 2217-14 Hayashi-cho, Takamatsu, Kagawa 761-0395 Japan
(email, web) |
|
|
| Derek Palmer |
Palmer Semiconductor Associates, "Olde Stone", Lydford, Devon EX20-4BH, UK
(email, web) |
|
|
| Rui Nuno Pereira |
Institute of Solid State Physics, Technical University of Berlin, Hardenbergstr. 36, D-10623 Berlin, Germany
(email, web) |
Determination of nickel-related defect levels in the diamond gap |
Talk |
| Clas Persson |
Condensed Matter Theory Group, Department of Physics, Box 534, University of Uppsala, SE-751 21 Uppsala, Sweden
(email, web) |
Effective electron and hole masses in intrinsic and
heavily n-type doped GaN and AlN |
Talk |
| | |
First-principle calculations of dielectric function in cubic and hexagonal InN | Poster |
| Nelson Pinho |
School of Physics, University of Exeter, Exeter EX4 4QL, UK
(email) |
Passivation of Beryllium and Magnesium by Hydrogen in Boron Nitride |
Poster |
| Luis L Ramos |
Institut fuer Festkoerpertheorie und Theoretische Optik, Friedrich-Schiller-Universitaet, 07743 Jena, Germany
(email, web) |
Ab initio theory of native defects in alloys:
application to charged N vacancies in Al_xGa_(1-x)N |
Poster |
| Jürgen Ristein |
Institute of Technical Physics, University of Erlangen, Erwin-Rommel-Str. 1, D-91058 Erlangen, Germany
(email) |
An Electrochemical Model for the Surface Conductivity of Diamond |
Invited talk |
| John Robertson |
Engineering Dept, Cambridge University, Cambridge CB2 1PZ, UK
(email) |
Electronic Structure of Wide-gap Diamond-like Carbons |
Invited talk |
| Simon Rushworth |
Epichem Ltd, Power Road, Bromborough, Wirral CH62 3QF, UK
(email, web) |
Epichem |
Booth |
| Kimmo T Saarinen |
Laboratory of Physics, Helsinki University of Technology, P. O. Box 1100, 02015 HUT, Finland
(email, web) |
Vacancies in the growth and doping of gallium nitride |
Invited talk |
| Margaret E Samiji |
Physics Department, University of Port Elizabeth, PO Box 1600, Port Elizabeth 6000, South Africa
(email, web) |
Hydrogen passivation and reactivation of the Al-acceptors in p-type 6H-SiC |
Poster |
| Gianluca Savini |
CPES, University of Sussex, Falmer, Brighton., BN1 9QJ, UK
(email) |
Structure and Energy of the 90 Degree Partial Dislocation in wurtzite-GaN |
Poster |
| Paul J Sellin |
University of Surrey, Department of Physics, Guildford GU2 7XH, UK
(email, web) |
|
|
| Elena Sirenko |
Ukrainian Engineerno-Pedagogical Academia, Prospect Pobedi, Dom 60A KB-50, Kharkov-61202, Ukraine
(email) |
Material Physics |
Poster |
| Mike Smyth |
Oxford Instruments plc, Old Station Way, Eynsham, Witney, Oxfordshire OX8 1TL, UK
(email, web) |
Oxford Instruments |
Booth |
| James S Speck |
Materials Department and ECE Department, University of California, Santa Barbara, CA 93106, USA
(email) |
Optimization of p-doping in the MBE growth of GaN |
Talk |
| G.P. Srivastava |
School of Physics, University of Exeter, Exeter EX4 4QL, UK
(email, web) |
|
|
| John W Steeds |
Department of Physics, University of Bristol, Tyndall Avenue, Bristol BS8 1TL, UK
(email, web) |
Photoluminescence microscopy of TEM irradiated diamond and SiC - a new route to high spatial resolution information about point defects at the ppm level and below |
Talk |
| | |
Micro-Raman and Low Temperature Photoluminescence Investigation of cubic Boron Nitride Single Crystals | Poster |
| Bengt G Svensson |
Oslo University, Physical Electronics, Department of Physics, P.B. 1048 Blindern, N-0316 Oslo, Norway
(email) |
Ion Implantation and Doping of Silicon Carbide |
Invited talk |
| Ted Thrush |
Thomas Swan Scientific Equipment Ltd, Buckingway Business Park, Cambridge CB4 5UG, UK
(email, web) |
Thomas Swan |
Booth |
| Vitor V Torres |
Physics Department, University of Aveiro, 3810 - 193 Aveiro, Portugal
(email) |
|
|
| Laima Trinkler |
Institute of Solid State Physics, University of Latvia, 8 Kengaraga Str., LV-1063 Riga, Latvia
(email, web) |
Controllable doping as a way to improve dosimetric properties of AlN ceramics |
Poster |
| Daniel DJ Twitchen |
De Beers Industrial Diamonds (UK) Ltd, Charters, Sunninghill, Sunningdale, Ascot, Berkshire
(email) |
|
|
| Chris G Van de Walle |
Xerox PARC, 3333 Coyote Hill Road, Palo Alto, CA 94304, USA
(email, web) |
Dopant engineering in wide-band-gap semiconductors |
Invited talk |
| Andre Venter |
Department of Physics, University of Port Elizabeth, PO Box 1600, Port Elizabeth 6000, South Africa
(email) |
|
|
| Nicholas T Wilson |
CPES, University of Sussex, Falmer, Brigton., BN1 9QJ, UK
(email, web) |
Annealing processes within Diamond-like Carbon |
Poster |
| Colin E C Wood |
Office of Naval Research, 800 N. Quincy St, Alrington VA 22217, USA
(email) |
|
|
Participants