Invited talk abstract

This talk summarizes results of computational studies, based on density-functional theory and planewave- pseudopotential methods, of point defects and defect- dopant complexes in GaN, AlN and SiC. Among the properties considered are formation energies, ionisation levels, structural parameters and vibrational frequencies. The results will be used to discuss a number defect-related experimental findings.

This work has been done in collaboration with Leena Torpo, Torsten Staab, Chris Latham and Meri Marlo. -